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Extended Roman Font - Hindi

 Devanāgarī script (देवनागरी), Brahmi script

Extended Roman Font - Sanskrit

This arrangement is usually referred to as the varṇamālā "garland of letters".

Cyrillic  

Tatăl nostru, carele ești în ceriuri, sfințascăse numeletău: Vie înprărățiia ta: Fie voia ta, pre cum în ceriu, și pre pământ.Pâinea noastră cea de toate zilele, dăneo noao astăzi. Și ne iartănoao datoriile noastre, pre cum și noi ertăm datornicilornoștri. Și nu ne duce pre noi în ispită, ci ne izbăveaște de cel rău.Că ata iaste înpărățiia, și Putearea, și mărirea în veaci, amin.

II Samo Alajbegović Fellowships (SAF)

Modern Greek  

Árthro 1: Óli i ánthropi yeniúnde eléftheri ke ísi stin aksioprépia ke ta dhikeómata. Íne prikizméni me loyikí ke sinídhisi, ke ofílun na simberiféronde metaksí tus me pnévma adhelfosínis.

Scientific Text

Carbon nanotubes (CNTs) are tantalizing candidates for semiconductor electronics because of their exceptional charge transport properties and one-dimensional electrostatics. Ballistic transport approaching the quantum conductance limit of 2G0 = 4e2/h has been achieved in field-effect transistors (FETs) containing one CNT. However, constraints in CNT sorting, processing, alignment, and contacts give rise to nonidealities when CNTs are implemented in densely packed parallel arrays such as those needed for technology, resulting in a conductance per CNT far from 2G0. The consequence has been that, whereas CNTs are ultimately expected to yield FETs that are more conductive than conventional semiconductors, CNTs, instead, have underperformed channel materials, such as Si, by sixfold or more. We report quasi-ballistic CNT array FETs at a density of 47 CNTs μm−1, fabricated through a combination of CNT purification, solution-based assembly, and CNT treatment. The conductance is as high as 0.46 G0 per CNT. In parallel, the conductance of the arrays reaches 1.7 mS μm−1, which is seven times higher than the previous state-of-the-art CNT array FETs made by other methods. The saturated on-state current density is as high as 900 μA μm−1 and is similar to or exceeds that of Si FETs when compared at and equivalent gate oxide thickness and at the same off-state current density. The on-state current density exceeds that of GaAs FETs as well. This breakthrough in CNT array performance is a critical advance toward the exploitation of CNTs in logic, high-speed communications, and other semiconductor electronics technologies.