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<b>Physics Graduate Student Symposium</b><br>Engineering the Properties and Defects of InAsSb by Atomic Surface Structure

Wednesday, June 17, 2015
12:00 AM
335 West Hall

Due to the recent discovery that InAsSb can be synthesized with a bandgap minimum corresponding to a wavelength of approximately 12 microns, it has become appealing for a variety of long wavelength infrared (LWIR) applications, such as renewable energy (thermophotovoltaics), automotive safety (pedestrian sensors), and the military (night vision).  For these applications, it is essential to synthesize InAsSb with minimal defects and understand the parameters needed to avoid incorporating point defects such as contaminants, vacancies, and antisites. Since all processes that occur during the growth of InAsSb occur at the surface of the material, the arrangement of atoms on the surface (surface reconstructions) must be well understood to control the incorporation of point defects.  I will discuss the use of a combination of computational and experimental techniques to achieve this goal.

Evan Anderson (U-M MSE)