Gallium nitride is best known as the semiconductor material of choice for LEDs and ultraviolet-visible wavelength semiconductor lasers. However, little is known that GaN is also a good piezoelectric material. The interplay between the optical, mechanical and electronic properties in GaN generates new exciting opportunities for GaN optoelectronics. In this talk, I will first explain the physics of strain engineering in GaN with an emphasis in GaN nanostructures. Several examples will then be given to illustrate the potential applications in quantum photonics, augmented reality, robotics, lighting, and neuroscience.
Building: | West Hall |
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Event Type: | Lecture / Discussion |
Tags: | Physics, Science |
Source: | Happening @ Michigan from Applied Physics |